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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
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Terahertz In-Sensor Computing Utilizing Photothermoelectric Thin Films.

He Shao1, Yuxuan Zhang1, Zhengxun Lai2

  • 1Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, China.

Advanced Materials (Deerfield Beach, Fla.)
|July 22, 2025
PubMed
Summary
This summary is machine-generated.

A novel bismuth selenide terahertz (THz) detector array offers high-precision sensing for biomedical and security applications. This self-powered device achieves rapid detection and enhanced imaging, overcoming previous limitations in THz technology.

Keywords:
flexible devicein‐sensor computingphotothermoelectricterahertz detection

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Terahertz (THz) detection is crucial for non-invasive biomedical diagnostics and security screening due to its unique spectral fingerprinting and non-ionizing properties.
  • Current THz detection methods face challenges including weak light-matter interactions, high energy consumption, and complex hardware, limiting widespread adoption.
  • Developing sensitive, efficient, and integrated THz sensing platforms remains a significant technological goal.

Purpose of the Study:

  • To fabricate and characterize a novel bismuth selenide (Bi2Se3)-based THz detection array.
  • To investigate the photothermal electric (PTE) effect for adaptive in-sensor signal processing and computing.
  • To evaluate the array's performance in self-powered THz detection, signal processing, and concealed object imaging.

Main Methods:

  • Fabrication of a layered Bi2Se3 THz detection array using low-temperature pulse irradiation synthesis (PIS).
  • Characterization of the array's tunable thermally coupled bidirectional response.
  • Assessment of the photothermal electric (PTE) effect for in-sensor signal processing, including noise suppression and feature extraction.
  • Evaluation of imaging performance for concealed object detection.

Main Results:

  • The fabricated Bi2Se3 array demonstrated a tunable bidirectional response.
  • The intrinsic photothermal electric (PTE) effect enabled self-powered operation with high responsivity (200 V/W) and fast response time (<5 ms) at 0.3 THz.
  • Integrated in-sensor computing improved accuracy through real-time noise reduction, edge detection, and feature extraction.
  • The array achieved a high imaging recall rate (>90%) for concealed object detection.

Conclusions:

  • A scalable, high-precision THz sensing platform based on Bi2Se3 has been successfully developed.
  • The intrinsic PTE effect and integrated in-sensor computing offer adaptive signal processing capabilities.
  • This technology holds transformative potential for advancing biomedical diagnostics and security screening applications.