III-V Compound Semiconductor Nanowire Arrays for Sensor Applications─A Review

In recent years, semiconductor nanowires have emerged as a promising platform for the development of next-generation sensing devices due to their nanoscale, one-dimensional geometry, high surface-to-volume ratio, and superior thermal, mechanical, optical, and electrical properties. III-V semiconductor-based nanowires, which have been extensively studied for the development of high-performance optoelectronic devices such as lasers, LEDs, photodetectors, and solar cells, also offer advantages for sensor applications due to their electronic band structure, efficient carrier transport, and well-established CMOS-compatible fabrication technology. In this article, we review the recent advancements in III-V nanowire array-based sensors. We first introduce the fabrication methods for III-V nanowire arrays, followed by a detailed discussion of different types of sensors based on this material, including chemical, mechanical, and magnetic sensors. The working mechanisms of these sensors are explained, with an emphasis on various design strategies to enhance the sensitivity, selectivity, stability, and energy efficiency. Finally, the current challenges and future perspectives for III-V nanowire array sensors are analyzed to provide further insights into new directions for III-V nanowire materials and device designs to enhance sensor performance for real-world applications.