Influence of Surface Isolation Layers on High-Voltage Tolerance of Small-Pitch 3D Pixel Sensors

In recent years, 3D pixel sensors have been a topic of increasing interest within the High Energy Physics community. Due to their inherent radiation hardness, demonstrated up to a fluence of 3×1016 1 MeV equivalent neutrons per square centimeter, 3D pixel sensors have been used to equip the innermost tracking layers of the ATLAS and CMS detector upgrades at the High-Luminosity Large Hadron Collider. Additionally, the next generation of vertex detectors calls for precise measurement of charged particle timing at the pixel level. Owing to their fast response times, 3D sensors present themselves as a viable technology for these challenging applications. Nevertheless, both radiation hardness and fast timing require 3D sensors to be operated with high bias voltages on the order of ∼150 V and beyond. Special attention should therefore be devoted to avoiding problems that could cause premature electrical breakdown, which could limit sensor performance. In this paper, TCAD simulations are used to gain deep insight into the impact of surface isolation layers (i.e., p-stop and p-spray) used by different vendors on the high-voltage tolerance of small-pitch 3D sensors. Results relevant to different geometrical configurations and irradiation scenarios are presented. The advantages and disadvantages of the available technologies are discussed, offering guidance for design optimization. Experimentalmeasurements from existing samples based on both isolation techniques show good agreement with simulated breakdown voltages, thereby validating the simulation approach.