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Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS.

Thomas Corradino1,2, Gian-Franco Dalla Betta1,2, Lorenzo De Cilladi3,4

  • 1Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, 38123 Trento, Italy.

Sensors (Basel, Switzerland)
|June 2, 2021
PubMed
Summary

Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) offer a promising alternative for radiation imaging. Backside processing with guard rings achieved over 400 V breakdown, enabling full substrate depletion for enhanced performance.

Keywords:
CMOSMAPSTCAD simulationdevice characterizationradiation detectors

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Area of Science:

  • Semiconductor Devices
  • Radiation Imaging Technology
  • CMOS Sensor Development

Background:

  • Hybrid detectors are common for radiation imaging.
  • Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) offer an alternative.
  • Previous work demonstrated FD-MAPS feasibility using adapted 110 nm CMOS technology.

Purpose of the Study:

  • To present the design of backside diodes for FD-MAPS.
  • To characterize test devices and understand limitations.
  • To improve FD-MAPS performance through optimized backside processing.

Main Methods:

  • Fabrication of FD-MAPS using 110 nm CMOS with high-resistivity substrates and backside post-processing.
  • Integration of p/n junction diodes on the detector backside.
  • Electrical characterization of test diodes with varying guard ring configurations.

Main Results:

  • Termination structures with guard rings effectively increased breakdown voltage.
  • Breakdown voltage exceeding 400 V was achieved with 30 guard rings (6 μm pitch).
  • Demonstrated feasibility of full depletion for substrates ≥ 300 μm thick.
  • Good agreement between measured pixel characteristics and 3D TCAD simulations.

Conclusions:

  • Backside processing with guard rings is effective for FD-MAPS.
  • The developed FD-MAPS technology supports high-resistivity substrates for advanced radiation imaging.
  • TCAD simulations accurately predict device behavior, aiding future design.