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Rect-SRAF method in inverse lithography technology.

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    Researchers studied adding rectangular and curved sub-resolution assist features (SRAFs) to initial masks for inverse lithography technology (ILT). Rectangular SRAFs significantly improve imaging quality and reduce critical dimension error after Manhattan transformation.

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    Area of Science:

    • Semiconductor manufacturing
    • Optical lithography
    • Computational lithography

    Background:

    • Inverse Lithography Technology (ILT) is crucial for advanced semiconductor patterning.
    • Sub-Resolution Assist Features (SRAFs) are essential for improving mask fidelity and process window.
    • The design of initial masks significantly impacts ILT performance and final pattern quality.

    Purpose of the Study:

    • To investigate the impact of curved and rectangular SRAFs on ILT performance.
    • To compare the effectiveness of rectangular versus curved SRAFs in initial mask design.
    • To evaluate the influence of SRAFs on critical dimension (CD) control and depth of focus (DOF).

    Main Methods:

    • Utilized a level set-based ILT framework.
    • Integrated SRAFs during the initial 3D surface construction phase.
    • Developed and compared methods using rectangular SRAFs versus curved masks as initial inputs.

    Main Results:

    • Both curved and rectangular SRAFs yield output masks with good imaging quality.
    • Rectangular SRAFs demonstrate a significant advantage in maintaining imaging quality post-Manhattan transformation.
    • The rectangular SRAF method reduced CD error by over 4% and increased DOF by more than 35 nm after transformation.

    Conclusions:

    • Rectangular SRAFs offer superior performance in ILT, particularly after Manhattan transformation.
    • The proposed method allows initial mask design to control SRAF type, simplifying subsequent mask processing.
    • This approach enhances CD control and process window, reducing manufacturing challenges.