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Quantitative Probing of Polarization-Driven Carrier Density Reconfiguration in FeFETs
Shengyao Su1,2,3, Yingli Zhang1,2,3, Chuanlai Ren1,2,3
1Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China.
None:
Quantitative understanding of polarization-induced carrier modulation at the nanoscale is crucial for optimizing ferroelectric field-effect transistors (FeFETs). Here, we integrate scanning microwave impedance microscopy (sMIM), piezoresponse force microscopy (PFM), and numerical modeling to quantitatively map ferroelectric domains and carrier distributions in MoS2/PZT-based FeFETs. We observe that polarization switching induces a two-order-of-magnitude change in carrier density (1011 to 1013 cm-2), which strongly influences the device's on/off behavior. Numerical reconstruction further reveals spatially heterogeneous carrier modulation governed by ferroelectric switching. This methodology provides a robust platform for probing polarization-carrier interactions in nanoscale, beneficial to future FeFETs optimization.
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