Design of Mott Multiferroic HfO2 by Inducing Unpaired d States

Guanwen Yao1, Ming Yu1, Xiaoyan Liu1,2

  • 1School of Integrated Circuits, Peking University, Beijing 100871, China.

Nano Letters
|August 5, 2025
PubMed
Summary

This study introduces Mott multiferroics in HfO2 via doping, enabling novel magnetoelectric coupling for ultrafast probabilistic computing. This breakthrough overcomes previous material limitations for advanced electronic applications.

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