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Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Sofía Cruces1, Mohit D Ganeriwala2, Jimin Lee1
1Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.
Nano Letters
|August 7, 2025
Summary
Researchers developed novel neuromorphic electronic devices using molybdenum disulfide memristors. These devices exhibit both volatile and nonvolatile resistive switching, mimicking synaptic functions for brain-inspired computing.
Area of Science:
- Neuromorphic Computing
- Materials Science
- Electronic Devices
Background:
- Brain-inspired computing requires electronic devices that emulate biological functions.
- Two-dimensional materials are promising for advanced neuromorphic applications.
Purpose of the Study:
- Investigate coexistence of volatile and nonvolatile resistive switching in lateral memristors.
- Explore molybdenum disulfide with silver electrodes for neuromorphic applications.
Main Methods:
- Fabrication of lateral memristors using molybdenum disulfide and silver electrodes.
- Direct-current measurements and pulse stimulation for synaptic function analysis.
- In situ transmission electron microscopy to study ion migration.
Main Results:
- Devices showed distinct switching voltages for volatile (~0.16 V) and nonvolatile (~0.52 V) operation.
- Demonstrated essential synaptic functions: paired-pulse facilitation and short/long-term plasticity.
- Observed lateral silver ion migration along molybdenum disulfide via in situ TEM.
Conclusions:
- Molybdenum disulfide lateral memristors with silver electrodes exhibit dual resistive switching behaviors.
- The devices successfully emulate key synaptic functions, crucial for neuromorphic computing.
- Silver ion migration mechanism confirmed through experimental and modeling approaches.
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