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Long wavelength infrared sensor array using VO2 microstructures fabricated on visible GaN LED.

Minhyeok Shin1, Anh Thi Dieu Nguyen2, Taenam Kwon1

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Summary
This summary is machine-generated.

This study integrates vanadium dioxide (VO2) with gallium nitride (GaN) light-emitting diodes (LEDs) to create a novel infrared sensor. The device optically detects temperature changes by converting resistance variations into visible light emission.

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BolometerLight-emitting diodeLong-wavelength-infraredNitride semiconductorVanadium oxide

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Infrared Sensing

Background:

  • Vanadium dioxide (VO2) exhibits a metal-to-insulator transition crucial for thermal sensing.
  • Gallium nitride (GaN)-based light-emitting diodes (LEDs) offer efficient light emission for readout.
  • Integrating these materials can lead to novel optoelectronic sensor applications.

Purpose of the Study:

  • To develop a long-wavelength infrared sensor array by integrating VO2 microstructure arrays with GaN-based LEDs.
  • To enable direct conversion of temperature-induced resistance changes into visible light emission.
  • To create a low-voltage, individually addressable infrared sensing heterostructure.

Main Methods:

  • Fabrication of VO2 microstructure arrays integrated with InxGaN1-x LEDs.
  • Utilizing GaN-based LEDs as a readout unit for the VO2/LED heterostructure.
  • Characterization of VO2 layer uniformity and metal-to-insulator transition behavior.

Main Results:

  • The VO2/LED heterostructure successfully converted temperature-induced resistance changes into visible light emission.
  • Consistent metal-to-insulator transition behavior was observed across all pixels due to uniform VO2 properties.
  • Low-voltage operation at 2.5 V was achieved, with LED brightness inversely proportional to VO2 resistivity changes.
  • Individually addressable pixels allowed for optical detection of temperature variations, including direction and degree.

Conclusions:

  • The developed VO2/LED heterostructure serves as an effective long-wavelength infrared sensor array.
  • Optical readout of temperature variations is feasible, offering a novel sensing mechanism.
  • The individually addressable pixels enable directional and quantitative thermal detection.