Enhanced Photoelectrochemical Performance of 2D Bi₂O₃/TiO₂ Heterostructure Film by Bi₂S₃ Surface Modification and...

Photoelectrochemical devices have garnered extensive research attention in the field of smart and multifunctional photoelectronics, owing to their lightweight nature, eco-friendliness, and cost-effective manufacturing processes. In this work, Bi₂S₃/Bi₂O₃/TiO₂ heterojunction film was successfully fabricated and functioned as the photoelectrode of photoelectrochemical devices. The designed Bi₂S₃/Bi₂O₃/TiO₂ photoelectrochemical photodetector possesses a broad light detection spectrum ranging from 400 to 900 nm and impressive self-powered characteristics. At 0 V bias, the device exhibits an on/off current ratio of approximately 1.3 × 10⁶. It achieves a commendable detectivity of 5.7 × 10¹³ Jones as subjected to a 0.8 V bias potential, outperforming both bare TiO₂ and Bi₂O₃/TiO₂ photoelectrochemical devices. Moreover, the Bi₂S₃/Bi₂O₃/TiO₂ photoelectrode film shows great promise in pollutant decomposition, achieving nearly 97.7% degradation efficiency within 60 min. The appropriate band energy alignment and the presence of an internal electric field at the interface of the Bi₂S₃/Bi₂O₃/TiO₂ film serve as a potent driving force for the separation and transport of photogenerated carriers. These findings suggest that the Bi₂S₃/Bi₂O₃/TiO₂ heterojunction film could be a viable candidate as a photoelectrode material for the development of high-performance photoelectrochemical optoelectronic devices.