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Bilateral Geiger mode avalanche in InSe Schottky photodiodes.

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Researchers developed a new avalanche photodiode using Graphene/InSe/Cr for sensitive weak light detection. This device achieves high gain at low voltage, enabling efficient signal detection.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Avalanche photodiodes (APDs) are essential for detecting faint light signals.
  • Existing APDs often have high breakdown voltages or low gain, limiting their performance.
  • Graphene and Indium Selenide (InSe) are promising 2D materials for optoelectronic applications.

Purpose of the Study:

  • To report a novel bilateral Geiger mode avalanche in a Graphene/InSe/Cr asymmetrical Schottky junction.
  • To achieve high gain and low breakdown voltage for improved APD performance.
  • To demonstrate the potential for sensitive weak light signal detection.

Main Methods:

  • Fabrication of a two-dimensional Graphene/InSe/Cr asymmetrical Schottky junction.
  • Characterization of the device's electrical and optoelectronic properties.
  • Analysis of carrier transport and avalanche multiplication mechanisms.

Main Results:

  • Achieved a high gain of 6.3 × 107 at a low breakdown voltage of 1.4 V.
  • Demonstrated a positive temperature coefficient of the ionization rate and a low critical electric field (11.5 kV cm-1).
  • Exhibited low dark current and noise equivalent power, enabling detection of signals as low as ~35 photons at room temperature.

Conclusions:

  • The Graphene/InSe/Cr asymmetrical Schottky junction facilitates efficient bilateral Geiger mode avalanche.
  • The device offers a promising solution for energy-efficient, high-gain APDs.
  • This work presents new strategies for developing advanced weak light detection technologies.