Related Experiment Video
Updated: Sep 10, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Achieving Large Valley Polarization in Altermagnet Semiconductor Mg(FeN)2 Monolayer
Qiqi Wang1, Li Deng1, Yanzhao Wu2
1Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
Abstract:
Achieving valley polarization in altermagnets holds crucial significance for advancing the field of valleytronics. In this study, the Mg(FeN)2 monolayer is predicted as an altermagnet semiconductor with an in-plane magnetic anisotropy. Moreover, a pair of energy-degenerate valleys occurs in the present Mg(FeN)2 monolayer, which is connected by the crystalline symmetry. Two equivalent valleys can be polarized and reversed by applying an electric field along the z direction or in-plane uniaxial strain. To further enhance the valley polarization, a coordinated approach by combining both electric field and strain is proposed. Through simultaneously applying an electric field and uniaxial strain in the Mg(FeN)2 monolayer, the valley polarization could be 1.5 and 2.9 larger than that of just only applying in-plane uniaxial strain and an electric field, respectively. This coordinated regulation strategy offers a promising approach for precise valley polarization control, thereby broadening the scope for innovative valleytronics device design.
Related Concept Videos
Ferromagnetism
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Paramagnetism

