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Bayesian neural network with unified entropy source and synapse weights using 3D 16-layer Fe-diode array.

Yuanquan Huang1,2,3, Qiqiao Wu4,5, Tiancheng Gong6,7

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|August 28, 2025
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Fe-diode devices offer a stable, high-frequency entropy source ideal for edge artificial intelligence (AI) systems. These devices enable efficient, accurate AI computations even under extreme temperatures and high frequencies.

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Area of Science:

  • Materials Science
  • Artificial Intelligence
  • Device Physics

Background:

  • Edge AI systems demand high-frequency operation, challenging traditional entropy sources that degrade with frequency.
  • Existing entropy sources struggle with the stability required for edge AI under varying temperatures and frequencies.

Purpose of the Study:

  • To investigate the suitability of Fe-diode devices as a stable, high-frequency entropy source for edge AI.
  • To experimentally implement a Bayesian neural network using Fe-diode devices on silicon-based chips.

Main Methods:

  • Characterization of Fe-diode device noise density across varying read voltages, frequencies, and temperatures.
  • Experimental implementation of a hierarchical Bayesian neural network utilizing a 3D 16-layer Fe-diode array.
  • Demonstration of a unified entropy source and 4-state synapse architecture.

Main Results:

  • Fe-diode devices exhibit stable noise density, modifiable by read voltage, across high frequencies and temperature fluctuations.
  • The implemented Bayesian neural network achieved high recognition accuracy.
  • The system demonstrated high area efficiency and a wide working temperature range.

Conclusions:

  • Fe-diode devices are physically suitable for edge AI applications requiring high frequencies and environmental stability.
  • The developed Fe-diode-based Bayesian neural network offers low-energy in-situ training and high performance for edge AI.