Thermotolerant oscillatory neural networks enabled by electrical compensation
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Updated: Nov 12, 2026

Closed-loop Neuro-robotic Experiments to Test Computational Properties of Neuronal Networks
Published on: March 2, 2015
Seong-Yun Yun1, Hyun-Bin Noh1, Sang-Won Lee1
1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. ykchoi@ee.kaist.ac.kr.
Abstract:
This work presents a thermotolerant oscillatory neural network (tONN) that is realized by using electrical compensation. The fundamental building block of the tONN consists of a pair of single-transistor oscillators (1T-Os), each connected to a load resistor (RL), and a coupling capacitor (CC) linking the two 1T-Os. Each 1T-O generates an oscillatory output voltage through the single-transistor latch (STL) phenomenon, whose latch-up voltage and oscillation frequency are inherently sensitive to temperature variations. The synchronization dynamics of a capacitively coupled pair of 1T-Os are investigated under dissimilar thermal conditions. A temperature imbalance between the paired 1T-Os degrades synchronization coherence as a result of a frequency mismatch. Normal tONN operation is achieved by controlling the gate voltage (VG) of the 1T-Os. By electrically compensating for ambient temperature variations and restoring frequency matching, control over VG enables coherent out-of-phase synchronization. The resulting thermal robustness is further demonstrated in edge detection and classification tasks. These findings demonstrate a device-level approach for realizing thermally robust ONN hardware using electrically compensated 1T-Os as compact, CMOS-compatible building blocks under anisothermal conditions.
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