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InAs Colloidal Quantum Dot Photodiode Stack for CMOS-Integrated Infrared Imaging.

Abu Bakar Siddik1,2, Wenya Song1, Epimitheas Georgitzikis1

  • 1IMEC, Kapeldreef 75, 3001 Leuven, Belgium.

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|September 2, 2025
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Summary
This summary is machine-generated.

This study presents a novel colloidal InAs quantum dot photodiode for infrared detection up to 1200 nm. The device achieves low dark current and enables infrared imaging beyond CMOS sensor capabilities.

Keywords:
CMOS-integrated infrared imagerCuIIGZOInAs colloidal quantum dotcryogenic J−V and C−Vphotoelectron spectroscopytraps

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Area of Science:

  • Materials Science
  • Quantum Dot Technology
  • Infrared Photodetectors

Background:

  • Heavy-metal-free III-V semiconductor colloidal quantum dots (CQDs), like InAs, are promising for near- and short-wave infrared detection.
  • Current research is limited to <1100 nm due to synthesis, junction formation, and passivation challenges with larger InAs CQDs.
  • Systematic studies on device design, dark current mechanisms, and trap distributions in larger InAs CQDs are scarce.

Purpose of the Study:

  • To develop and characterize a novel thin-film PIN heterojunction colloidal InAs photodiode for extended infrared detection (1200 nm).
  • To investigate the dark current mechanisms and trap state distributions in larger InAs CQDs.
  • To demonstrate the potential for infrared imaging using integrated photodiode technology.

Main Methods:

  • Fabrication of a thin-film PIN heterojunction photodiode using colloidal InAs (1200 nm) with amorphous indium gallium zinc oxide and copper(I) iodide transport layers.
  • Characterization of device performance, including temperature-dependent current-voltage (I-V) measurements and impedance spectroscopy.
  • Analysis of dark current mechanisms, trap state distributions, and specific detectivity (D*).
  • Monolithic integration of the photodiode with a Si read-out integrated circuit (IC) for imaging demonstration.

Main Results:

  • Achieved one of the lowest reported dark current densities for InAs CQDs (4.7 μA/cm² at -1 V, 298 K), decreasing to 3.6 nA/cm² at 220 K.
  • Identified dominant deep trap states within the InAs CQD layer (∼0.4 eV below band edge) using impedance spectroscopy.
  • Demonstrated specific detectivity (D*) approaching the shot-noise-limited baseline (2.5 × 10¹¹ Jones) at frequencies ≥500 Hz.
  • Successfully demonstrated infrared imaging beyond the spectral range of CMOS sensors via monolithic integration.

Conclusions:

  • The developed InAs CQD photodiode offers superior performance for infrared detection up to 1200 nm with exceptionally low dark current.
  • Understanding trap state distributions is crucial for optimizing photodiode performance and mitigating noise.
  • This technology holds significant promise for advanced infrared imaging applications, surpassing current CMOS limitations.