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Valley-Layer-Polarized Anomalous Hall Effect in a Two-Dimensional Multiferroic van der Waals Material
Yanghao Tang1, Ao Du1, Long Kuang1
1Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People's Republic of China.
ACS Applied Materials & Interfaces
|September 2, 2025
Summary
Researchers discovered a new 2D multiferroic material, scandium diiodide (ScI₂), which exhibits significant spontaneous valley polarization. This finding paves the way for advanced valleytronic devices and next-generation electronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Emerging phenomena like the valley Hall effect and layer Hall effect are crucial for next-generation electronics.
- Current research on the layer Hall effect is limited to antiferromagnetic or topological systems.
Purpose of the Study:
- To establish a valley-layertronics framework for 2D multiferroic materials.
- To investigate the potential of two-dimensional scandium diiodide (ScI₂) for valleytronic applications.
Main Methods:
- Utilized first-principles calculations to explore the properties of 2D ScI₂.
- Investigated spontaneous valley polarization in monolayer and bilayer ScI₂.
- Analyzed the tunable valley-layer-polarized anomalous Hall effect in ScI₂ bilayers.
Main Results:
- Predicted that 2D ScI₂ is a multiferroic material with substantial spontaneous valley polarization (93.4 meV for monolayer, 93.7 meV for bilayer).
- Uncovered a tunable valley-layer-polarized anomalous Hall effect in ferromagnetic ScI₂ bilayers.
- Demonstrated that this effect can be jointly tuned by ferroelectric polarization and magnetization direction.
Conclusions:
- 2D ScI₂ serves as a promising multiferroic material for valleytronics.
- The tunable anomalous Hall effect in ScI₂ offers a robust platform for advancing valley-layertronics.
- Findings open new avenues for next-generation electronic and valleytronic devices.
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