A sensitive photoelectrochemical aptasensor based on Bi/Bi2MoO6-modified phosphorus-doped ultrathin g-C3N4 formed

Ziqian He1, Jiamin Huang1, Yulei Wang1

  • 1School of Chemistry and Chemical Engineering, Guangdong Provincial Key Laboratory of Optoelectronic Materials and Sensor Components, School of Economics and Statistics, Guangzhou Key Laboratory of Sensing Materials & Devices, Centre for Advanced Analytical Science, Guangzhou University, Guangzhou, 510006, China.

Talanta
|September 2, 2025
PubMed