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Updated: May 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Transfer-free growth of wafer-level graphene via a Mo sacrificer
Wenze Wei1,2, Yiming Luo3, Kaixuan Zhou2
1College of Energy, Soochow Institute for Energy and Materials Innovations, SUDA-BGI Collaborative Innovation Center, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou 215006, China. sunjy86@suda.edu.cn.
Abstract:
This study presents a straightforward method to allow transfer-free graphene growth on SiO2/Si substrates, with Mo serving as a sacrificial layer, which could be easily removed by simple air blowing. Such a route eliminates the need for chemical etching of metal catalysts. The resulting 2-inch graphene wafer shows electrical uniformity and minimal metal residue.
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