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Published on: July 2, 2018
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Nano-laminography with a transmission X-ray microscope.
Viktor Nikitin1, Alberto Mittone1, Samuel J Clark1
1Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA.
Journal of Synchrotron Radiation
|September 10, 2025
Summary
X-ray nano-laminography provides high-resolution 3D imaging for flat samples. This advanced technique overcomes limitations of conventional nano-tomography, enabling detailed analysis of challenging specimens like integrated circuits.
Area of Science:
- Materials Science
- Nanotechnology
- X-ray Imaging
Background:
- Conventional nano-tomography struggles with imaging laterally extended, flat specimens due to artifacts from long optical path lengths.
- These limitations hinder detailed 3D structural analysis of planar samples, such as integrated circuits and challenging powder particle mounts.
Purpose of the Study:
- To demonstrate a full-field X-ray nano-laminography system for high-resolution 3D imaging of flat specimens.
- To overcome the limitations of conventional nano-tomography for imaging challenging sample geometries.
Main Methods:
- Implementation of a full-field, X-ray nano-laminography system at the Advanced Photon Source (APS) beamline 32-ID.
- Utilized a tilted rotational geometry (sample axis inclined 20° to the incident beam) to minimize artifacts.
- Developed specific sample mounting strategies, data acquisition protocols, and reconstruction methods tailored for nano-laminography.
Main Results:
- Achieved 50 nm spatial resolution in 3D imaging.
- Demonstrated minute-scale temporal resolution for dynamic imaging.
- Successfully imaged a planar integrated circuit and an individual particle within a powder sample, showcasing the technique's efficiency and versatility.
Conclusions:
- X-ray nano-laminography is an effective technique for high-resolution 3D imaging of flat and extended specimens.
- The developed system overcomes key challenges associated with conventional nano-tomography, enabling analysis of previously difficult samples.
- This advancement facilitates detailed structural characterization in fields like microelectronics and materials science.

