Buried SWCNTs Interlayer Promotes Hole Extraction and Stability in Inverted CsPbI_2.85Br_0.15 Perovskite Solar Cells

Inverted (p-i-n) CsPbI_xBr_3-x (x = 0~3) perovskite solar cells (PSCs) are of growing interest due to their excellent thermal stability and optoelectronic performance. However, they suffer from severe energy level mismatch and significant interfacial energy losses at the bottom hole transport layers (HTLs). Herein, we propose a strategy to simultaneously enhance the crystallinity of CsPbI_2.85Br_0.15 and facilitate hole extraction at the HTL/CsPbI_2.85Br_0.15 interface by incorporating semiconducting single-walled carbon nanotubes (SWCNTs) onto [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl] phosphonic acid (MeO-2PACz) HTL. The unique electrical properties of SWCNTs enable the MeO-2PACz/SWCNT HTL to achieve high conductivity, optimal energy level alignment, and an adaptable surface. Consequently, the defect density is reduced, hole extraction is accelerated, and interfacial charge recombination is effectively suppressed. As a result, these synergistic benefits boost the power conversion efficiency (PCE) from 15.74% to 18.78%. Moreover, unencapsulated devices retained 92.35% of their initial PCE after 150 h of storage in ambient air and 89.03% after accelerated aging at 85 °C for 10 h. These findings highlight the strong potential of SWCNTs as an effective interlayer for inverted CsPbI_2.85Br_0.15 PSCs and provide a promising strategy for designing high-performance HTLs by integrating SWCNTs with self-assembled monolayers (SAMs).