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Updated: Jan 17, 2026

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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
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Spontaneous In-Plane Anomalous Hall Response Observed in a Ferromagnetic Oxide
Shinichi Nishihaya1, Yuta Matsuki1, Haruto Kaminakamura1
1Department of Physics, Institute of Science Tokyo, Tokyo, 152-8551, Japan.
Advanced Materials (Deerfield Beach, Fla.)
|September 16, 2025
Summary
Researchers discovered spontaneous in-plane anomalous Hall effect (AHE) in SrRuO3 films. This effect is controllable via spin magnetization direction, offering new possibilities for spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Anomalous Hall effect (AHE) typically studied for out-of-plane responses.
- In-plane AHE offers new degrees of freedom for engineering Hall responses.
- Off-diagonal coupling in AHE is constrained by system symmetry.
Purpose of the Study:
- To elucidate in-plane anomalous Hall effect (AHE) in ferromagnetic oxide SrRuO3.
- To investigate spontaneous AHE and its coupling to spin magnetization.
- To explore control of in-plane Hall responses via spin direction.
Main Methods:
- Fabrication of (111)-orientated ultrathin SrRuO3 films.
- Systematic measurements of Hall response under varying magnetic field angles.
- Characterization of spin magnetization and its influence on AHE.
Main Results:
- Observation of spontaneous in-plane AHE at zero field in SrRuO3 films.
- Intrinsic coupling between in-plane AHE and in-plane spin magnetization.
- Complex Hall responses influenced by higher-order terms due to trigonal distortion.
Conclusions:
- Demonstrated versatile and controllable in-plane Hall responses in SrRuO3.
- Highlighted the role of out-of-plane orbital ferromagnetism in observed effects.
- Opened new avenues for engineering Hall responses in spintronic applications.
Keywords:
anomalous hall effectin‐plane field effectmagnetic weyl semimetalmolecular beam epitaxyorbital magnetizationMore Related Videos
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