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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Field-Induced Structural Dynamics of Polarization Switching in HfxZr1-xO2 Thin Films

Sangjun Lee1, Sunghyun Kim1, Seong Yong Park1

  • 1Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Ltd, Suwon, 16678, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|September 25, 2025
PubMed

Keywords:
HfxZr1‐xO2 thin filmsfield‐induced phase transitionsin situ GIXRDmetadynamics simulationsswitching mechanism

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