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Design of a High-Power, High-Efficiency GaN Power Amplifier for W-Band Applications.

Shuai Liu1,2, Xiaohua Ma1, Yi Zhang2

  • 1School of Microelectronics, Xidian University, Xi'an 710071, China.

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|September 27, 2025
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Summary

This study introduces a high-efficiency, high-output power amplifier for W-band applications. It achieves the highest power-added efficiency (PAE) in the 80-86 GHz range, surpassing previous designs.

Keywords:
GaN HEMTW-bandbalanced architecturehigh-efficiency power amplifierlange coupler

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Microwave Engineering

Background:

  • W-band frequencies (80-116 GHz) are crucial for high-bandwidth communication systems.
  • Developing efficient and high-power amplifiers for W-band operation presents significant challenges.
  • Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT) technology offers superior performance for high-frequency applications.

Purpose of the Study:

  • To design and demonstrate a W-band power amplifier (PA) with high efficiency and output power.
  • To optimize PA performance across the entire W-band frequency range.
  • To achieve state-of-the-art power-added efficiency (PAE) compared to existing W-band PAs.

Main Methods:

  • Utilized a 130 nm AlGaN/GaN-on-SiC HEMT process for device fabrication.
  • Employed a balanced amplifier architecture with two units combined via Lange couplers.
  • Incorporated high- and low-impedance microstrip lines for impedance matching and a three-stage amplifier core for enhanced gain.

Main Results:

  • Achieved a small-signal gain exceeding 17 dB at -2.2 V gate and +20 V drain voltages.
  • Delivered >34 dBm output power with 22 dBm input power in the 80-86 GHz band.
  • Attained a power gain >12 dB and a power-added efficiency (PAE) >20%, demonstrating the highest PAE in this band.

Conclusions:

  • The developed W-band PA exhibits excellent output power and gain performance.
  • The balanced architecture and optimized matching networks contribute to high efficiency.
  • This work sets a new benchmark for PAE in the 80-86 GHz frequency range, paving the way for advanced W-band systems.