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Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
BJT Amplifiers01:14

BJT Amplifiers

Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role extends...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
Cascaded Op Amps01:16

Cascaded Op Amps

Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
Maximum Power Transfer01:16

Maximum Power Transfer

Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
Frequency Response of BJT01:24

Frequency Response of BJT

The frequency response of a Bipolar Junction Transistor (BJT) in a common-emitter configuration is critical to its functionality, especially in applications involving amplification of alternating current (AC) signals. This response can be analyzed through low-frequency and high-frequency equivalent circuits, considering various internal parameters and external conditions.
Low-Frequency Response: At low frequencies, the behavior of the BJT is determined by its DC bias point, which is set by the...

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Related Experiment Video

Updated: Jun 27, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
13:44

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

6-18 GHz High-Efficiency Power Amplifier MMIC Based on Broadband Impedance Matching.

Shuai Liu1,2, Xiaohua Ma1, Yi Zhang2

  • 1School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|June 26, 2026
PubMed
Summary

A new gallium nitride high-electron mobility transistor (GaN HEMT) power amplifier was developed for broadband applications. This high-efficiency monolithic microwave integrated circuit (MMIC) achieves over 43.5 dBm power and 30% PAE.

Keywords:
Chebyshev matching networkbroadband power amplifierhigh efficiencypower amplifier

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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
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Last Updated: Jun 27, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
13:44

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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
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Published on: February 4, 2018

Area of Science:

  • Electronics
  • Materials Science
  • Electrical Engineering

Background:

  • Modern communication systems demand high-efficiency, broadband power amplifiers.
  • Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs) offer superior performance for these applications.
  • Existing MMIC power amplifiers face challenges in achieving both high efficiency and wide bandwidth.

Purpose of the Study:

  • To design and develop a high-efficiency, broadband monolithic microwave integrated circuit (MMIC) power amplifier.
  • To meet the stringent requirements of modern communication technology.
  • To explore advanced design techniques for enhanced performance.

Main Methods:

  • Utilized a 0.25 μm GaN HEMT process for fabrication.
  • Employed a multistage Chebyshev-filter-based matching approach for bandwidth and harmonic control.
  • Implemented a multi-cell combining architecture in the final power stage for high output power.

Main Results:

  • Achieved a saturated output power exceeding 43.5 dBm.
  • Reached a Power Added Efficiency (PAE) of over 30%.
  • The designed GaN amplifier has a compact area of 4 × 3.2 mm².

Conclusions:

  • The developed GaN MMIC power amplifier demonstrates excellent high-efficiency and broadband performance.
  • The combination of Chebyshev filtering and multi-cell architecture is effective for achieving target specifications.
  • This compact, high-performance amplifier is suitable for advanced wideband communication systems.