MOSFET Amplifiers
BJT Amplifiers
Small-Signal Analysis of MOSFET Amplifiers
Cascaded Op Amps
Maximum Power Transfer
Frequency Response of BJT
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jun 27, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Shuai Liu1,2, Xiaohua Ma1, Yi Zhang2
1School of Microelectronics, Xidian University, Xi'an 710071, China.
A new gallium nitride high-electron mobility transistor (GaN HEMT) power amplifier was developed for broadband applications. This high-efficiency monolithic microwave integrated circuit (MMIC) achieves over 43.5 dBm power and 30% PAE.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: