Structure and Temperature Dependence of Solder Layer and Electric Parameters in IGBT Modules

IGBT high-power devices are subjected to various extreme working conditions for long periods and are affected by multiple loading conditions, inevitably leading to various aging and failure issues. Among them, the solder layer, as one of the weakest parts in the packaging structure of IGBT modules, has rarely been studied regarding its thermal fatigue characteristics and interface structure evolution behavior. In this work, a rapid temperature test chamber was used to conduct a thermal fatigue temperature cycling experiment on IGBT modules from -40 to 150 °C. The microscopic structural evolution behavior and the growth pattern of intermetallic compounds (IMC) during the solder layer's thermal fatigue process of the IGBT modules were studied. At the same time, the changes in relevant static parameters of the IGBT after thermal cycling fatigue were tested using an oscilloscope and a power device analyzer, thereby clarifying the failure mechanism of the IGBT module. This provides a theoretical basis and data support for the thermal design and reliability assessment of IGBT modules.