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Charge Trapping Effects on n-MOSFET Current Mirrors Under TID Radiation.

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Summary

Total ionizing dose (TID) radiation significantly degrades n-MOSFET current mirrors. Charge trapping causes threshold voltage shifts and reduced output accuracy, crucial for radiation-hardened designs.

Keywords:
current gainelectrical stressinput−output impedancesn−MOSFET current mirrorsthreshold voltagetotal ionizing dose

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Area of Science:

  • Semiconductor Physics
  • Radiation Effects on Electronics
  • Integrated Circuit Reliability

Background:

  • n-MOSFET current mirrors are essential components in analog circuits.
  • Understanding radiation-induced degradation is critical for reliable electronic systems in harsh environments.

Purpose of the Study:

  • To evaluate the impact of total ionizing dose (TID) radiation on n-MOSFET current mirror performance.
  • To analyze the relationship between charge trapping and current mirror degradation under TID exposure.

Main Methods:

  • Subjecting n-MOSFET current mirrors to TID doses ranging from 50 to 300 krad(Si) using a 60Co gamma source.
  • Employing an experimental approach to measure threshold voltage shifts and transconductance changes.
  • Quantifying the reduction in current mirror output accuracy.

Main Results:

  • Observed threshold voltage shifts up to 1.31 V.
  • Measured transconductance increases of up to 27%.
  • Reported a >10% reduction in current mirror output accuracy at the highest TID dose.

Conclusions:

  • TID radiation induces performance degradation in n-MOSFET current mirrors primarily due to charge trapping in the gate oxide and Si-SiO2 interface.
  • The study provides quantitative benchmarks for assessing TID impact on current mirror performance.
  • Results emphasize the necessity of considering TID effects in the design of radiation-hardened n-MOSFET current mirrors.