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Tunable Ferroelectric Properties in Highly (0002)-Textured Zn1-xMgxO Films
Wenjin Zhao1, Yao Kang1, Jinyang Sui1
1Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China.
ACS Applied Materials & Interfaces
|October 6, 2025
Summary
This study reveals how magnesium content in Zinc Magnesium Oxide (ZnMgO) thin films impacts their ferroelectric properties and defects. Defect engineering is key to controlling these properties for advanced memory devices.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Zinc Oxide (ZnO) based materials are promising for electronic applications.
- Tuning material properties through doping is a key strategy in materials science.
- Ferroelectric materials are essential for non-volatile memory devices.
Purpose of the Study:
- To investigate the effect of varying magnesium (Mg) content on the structural, ferroelectric, and defect properties of Zn1-xMgxO thin films.
- To understand the role of growth conditions and defect states in determining ferroelectric behavior.
- To explore the potential of Zn1-xMgxO for next-generation memory applications.
Main Methods:
- Systematic synthesis of Zn1-xMgxO thin films with controlled Mg content (x = 0.20-0.54) using a Pt/Pt/SiO2/Si substrate.
- Utilizing X-ray diffraction (XRD) for structural analysis and preferred orientation.
- Employing photoluminescence spectroscopy to characterize defect states.
- Conducting electrical measurements to evaluate ferroelectric properties (remanent polarization, coercive field, switching current).
- Performing computational modeling to complement experimental findings.
Main Results:
- The [111]-oriented Pt layer facilitated highly [0002]-preferred growth of wurtzite-structured Zn1-xMgxO films.
- Increased Mg content enhanced the threshold for phase separation.
- Remanent polarization and coercive field showed strong dependence on Mg concentration.
- Photoluminescence revealed that Mg content significantly alters defect types and concentrations, particularly oxygen vacancies (V_O+ and V_O2+).
- Defect engineering was identified as the mechanism behind the observed switching current peak-splitting phenomenon.
Conclusions:
- Mg doping in Zn1-xMgxO films offers a pathway to tune crystal structure, ferroelectric properties, and defect configurations.
- The study establishes a clear link between Mg content, structural evolution, defect states, and ferroelectric performance.
- Zn1-xMgxO exhibits significant potential for applications in next-generation memory devices due to its tunable polarization and robust endurance.
