Constructing a visible-light-excited Z-scheme heterojunction by engineering the directional N-C/Cu insertion layer:

Hao Gao1, Xiaoxiao He2, Jinbu Li1

  • 1Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, Department of Chemistry, School of Chemistry & Materials Science, Jiangsu Normal University Xuzhou 221116 P. R. China.

Chemical Science
|October 9, 2025
PubMed
Summary

Researchers developed a novel Z-scheme heterojunction using a nitrogen-doped carbon (N-C) mediator and copper (Cu) nanoparticles. This strategy overcomes work function mismatches, enhancing photocatalytic activity for organic synthesis and hydrogen evolution.

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
903
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.8K