Highly sensitive field-effect transistor sensor based on ZnO/TiO₂ for quantification of aflatoxin G2 with optimized...

Area of Science:

• Materials Science
• Analytical Chemistry
• Biosensing

Background:

• Aflatoxin G2 (AFG2) is a toxic mold metabolite found in agricultural products.
• AFG2 contamination poses significant health risks, including liver damage and cancer.
• Accurate detection of AFG2 is crucial for food safety regulations.

Purpose of the Study:

• To develop a highly sensitive ion-sensitive field-effect transistor (ISFET) sensor for AFG2 detection.
• To utilize a ZnO/TiO2 gate structure for enhanced sensor performance.
• To provide a rapid and reliable method for quantifying AFG2 in food samples.

Main Methods:

• Fabrication of an ISFET sensor with a ZnO/TiO2 gate structure using hydrothermal methods.
• Characterization of the sensor's morphology and structure using FESEM and XRD.
• Electrical measurements to determine sensor operation, optimal sensing voltage, and kinetic response.

Main Results:

• The developed ISFET sensor demonstrated high sensitivity (2.068 µA/nM) and a low detection limit (4.610 nM) for AFG2.
• The sensor operated effectively across a wide pH range (3-10), with optimal performance at pH 7-8.
• The sensor showed good reusability, stability, and detected AFG2 concentrations below FDA limits in corn juice.

Conclusions:

• The ZnO/TiO2 ISFET sensor provides a sensitive, stable, and reusable platform for AFG2 detection.
• The sensor's real-time operation and well-defined kinetic response make it a valuable tool for food safety.
• This method complements traditional techniques and offers a promising approach for quantitative AFG2 analysis.