Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

A low-power buffer-assisted 14T ternary SRAM.

Scientific reports·2026

Same author

Fine-grained temporal-spatial cues for theft recognition in surveillance videos.

Scientific reports·2025

Same author

Energy-efficient design of CNTFET-based quaternary arithmetic circuits.

Scientific reports·2025

Same author

Hyperspectral imaging and its applications: A review.

Heliyon·2024

Same author

A linear cross-coupled gate-driven quasi-floating bulk low-power wide input range transconductor.

The Review of scientific instruments·2024

Same author

Longitudinal cerebrospinal fluid measurements show glial hypo- and hyperactivation in predementia Alzheimer's disease.

Journal of neuroinflammation·2023

Search research articles

Related Experiment Video

Updated: Jan 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Power optimized quaternary logic circuits based on CNTFETs.

Ajay Rupani¹, Deepika Bansal², Kulbhushan Sharma³

¹Department of Electronics and Communication Engineering, Manipal University Jaipur, Jaipur, India.

|October 14, 2025

Summary

Novel quaternary logic gates using carbon nanotube field-effect transistors (CNTFETs) enhance computational efficiency. These circuits, including the quaternary half adder, offer improved power delay product for future computing systems.

Keywords:

Carbon nanotube field effect transistor Computing systems Multi-valued logic Quaternary half adder

More Related Videos

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: Jan 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Area of Science:

Electronics
Materials Science
Computer Engineering

Background:

High computational efficiency is crucial for modern digital systems.
Multivalued logic (MVL) circuits, particularly quaternary logic, reduce interconnections and increase data transfer rates.
Carbon nanotube field-effect transistors (CNTFETs) offer potential for high-performance logic circuits.

Purpose of the Study:

To propose novel standard quaternary inverter (SQI), SQNAND, and SQNOR logic gates using CNTFETs.
To design a quaternary half adder (QHA) utilizing these novel gates.
To evaluate the performance of the proposed quaternary circuits.

Main Methods:

Design of novel quaternary logic gates (SQI, SQNAND, SQNOR) employing a stacking technique.
Integration of these gates into a quaternary half adder (QHA) circuit.
Simulation of circuit performance using HSPICE with a 32 nm CNTFET Stanford model.

Main Results:

The proposed SQI, SQNAND, and SQNOR circuits operate at 0.9 V with power delay products (PDP) of 0.776 aJ, 1.523 aJ, and 2.746 aJ, respectively.
The QHA exhibits a power consumption of 1.01 µW and a PDP of 0.806 x 10⁻¹⁶ J.
The designed QHA demonstrates a superior PDP compared to previously reported designs.

Conclusions:

The proposed CNTFET-based quaternary logic gates and QHA offer high computational efficiency.
The novel designs show significant improvements in power delay product, making them suitable for advanced computing.
These advancements are anticipated to contribute to the development of futuristic computing systems.