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Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection.
Moonchurl Kim1, Jiwook Hong2, Choasub Kim3,4
1Department of Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Scientific Reports
|October 14, 2025
Summary
Hot Carrier Injection (HCI) offers efficient programming for NAND flash memory. A novel Bi-lateral HCI method improves charge injection uniformity and programming efficiency, overcoming limitations of Fowler-Nordheim tunneling.
Area of Science:
- Semiconductor Device Physics
- NAND Flash Memory Technology
- Advanced Electronic Materials
Background:
- Fowler-Nordheim (FN) tunneling faces challenges with high voltage requirements and low energy efficiency.
- Hot Carrier Injection (HCI) presents a promising alternative for efficient programming at reduced voltages.
- Conventional Self-boosting channel-based HCI suffers from program disturbance, non-uniform charge injection, and location-dependent efficiency variations.
Purpose of the Study:
- To investigate limitations of conventional Self-boosting channel-based HCI.
- To propose a novel Bi-lateral HCI programming (HCI-BiPGM) scheme.
- To enhance programming efficiency and uniformity in NAND flash memory.
Main Methods:
- Development of a novel Bi-lateral HCI programming (HCI-BiPGM) scheme.
- Symmetrical shaping of the lateral electric field around a central floating channel region.
- Technology Computer-Aided Design (TCAD) simulations for performance evaluation.
Main Results:
- The proposed HCI-BiPGM scheme ensures uniform charge injection and consistent programming efficiency.
- Achieved approximately 60% higher programming efficiency compared to FN tunneling methods.
- Demonstrated improved voltage balancing characteristics.
Conclusions:
- HCI-BiPGM effectively addresses program disturbance and charge injection non-uniformity.
- The novel scheme offers superior programming efficiency and location independence.
- HCI-BiPGM shows potential as an advanced low-power NAND flash programming technology.
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