Phonon anomalies, anharmonicity, and thermal expansion coefficient in few layered PtX2(X = S, Se): a temperature
Atul Chakkar1, Chaitanya B Auti1, Gaurav Bassi2
1School of Physical Sciences, Indian Institute of Technology Mandi, Mandi 175005, India.
Abstract:
Two-dimensional group-10 noble transition metal dichalcogenides have garnered growing attention due to their rich physical properties and promising applications across nanoelectronics, optoelectronics, and spintronics. Among them, PtX2(X = S, Se) exhibits pronounced interlayer coupling driven by hybridization of the out-of-planePzorbitals of the chalcogen atoms. In this work, we present a detailed temperature and polarization-resolved Raman spectroscopic study of few-layer PtS2and PtSe2over the temperature range of ∼5-300 K. Our study encompasses phonon-phonon interactions, symmetry analysis of phonon modes, low-frequency interlayer vibrations, and extraction of thermal expansion coefficients. Notable phonon anomalies in peak position, linewidth, and intensity emerge around ∼80 K and 150 K for PtS2, and ∼70 K and 240 K for PtSe2, indicating intricate coupling between vibrational and electronic dynamics. These results offer valuable insights for the development of devices based on PtS2, PtSe2, and related 2D materials, where interlayer interactions, anharmonic effects, and thermal expansion behaviour play crucial roles.
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