Tunable resonant Raman scattering with temperature in vertically aligned 2H-SnS₂

Two-dimensional semiconducting materials have a wide range of applications in various fields due to their excellent properties and rich physics. Here, we report a detailed investigation of temperature-dependent Raman and photoluminescence measurements on vertically aligned 2H-SnS₂ grown by the CVD method. Our results established the tunability of resonant Raman scattering with varying temperature, i.e., a crossover between resonance and non-resonance conditions for the current system. We also discussed the temperature as well as laser power dependence of the low-frequency asymmetric Raman mode, which is the interlayer shear mode. The temperature dependence of the intensity of the phonon modes also manifests the tunability of the resonant Raman scattering with temperature. Our temperature-dependent photoluminescence measurement shows the strong temperature dependence of the excitonic peaks and this is confirmed by the laser power dependence of the photoluminescence measurement at room temperature. Our investigation may help to design and fabricate devices based on vertically aligned 2H-SnS₂ and other similar materials in the future.