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Characterization of Interface Characteristics of Hexagonal Boron Nitride with Different Thicknesses Using Scanning
Jun Xing1, Huan Fei Wen2, Tao Pei1
1State Key Laboratory of Extreme Environment Optoelectronic Dynamic Measurement Technology and Instrument, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi 030051, China.
Langmuir : the ACS Journal of Surfaces and Colloids
|October 23, 2025
Summary
Hexagonal boron nitride (h-BN) shows thickness-dependent microwave response. Thinner h-BN layers alter dielectric gradients, while thicker layers weaken interface signals and increase absorption.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Hexagonal boron nitride (h-BN) is crucial for 2D electronic devices due to superior dielectric properties.
- Understanding h-BN's microwave response is vital for advanced electronic applications.
Purpose of the Study:
- To characterize the microwave response of h-BN with varying thicknesses.
- To investigate the dielectric response and microwave absorption effects of h-BN layers.
- To provide insights into h-BN's behavior in microwave frequency bands.
Main Methods:
- Utilized scanning microwave microscopy to analyze h-BN on interdigital electrodes.
- Characterized h-BN samples with different layer thicknesses.
Main Results:
- Microwave response of h-BN demonstrated a clear dependence on layer thickness.
- Thin h-BN layers (<90 nm) showed significant dielectric response gradient changes at interfaces.
- Thick h-BN layers (~170 nm) exhibited weakened interface signal changes due to dielectric shielding.
- Increased h-BN thickness correlated with enhanced microwave absorption.
Conclusions:
- h-BN's dielectric properties and microwave response are strongly thickness-dependent at the microscale.
- Findings offer experimental evidence and theoretical guidance for optimizing h-BN in microwave devices.
