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Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm2

Chang Woo Song1, Taeeun Lee2, Dongyeon Kim1

  • 1Department of Electronics and Communications Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Republic of Korea.

Micromachines
|October 29, 2025
PubMed

Keywords:
breakdown voltage (BV)lateral power MOSFETreduced surface field (RESURF)silicon on insulator (SOI)specific on-resistance (Ron,sp)

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