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Switching of BJT01:22

Switching of BJT

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Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
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A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Bistable and absolute switching driven by superconducting exchange coupling.

Sonam Bhakat1, Sounak Samanta2, Suddhasatta Mahapatra2,3

  • 1Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, India.

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|October 31, 2025
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Summary
This summary is machine-generated.

We demonstrate antiferromagnetic exchange coupling between ferromagnetic insulators using a superconductor. This coupling enables non-volatile cryogenic memory devices for quantum circuits and superconducting spintronics.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Computing

Background:

  • De Gennes' theory predicts superconducting-ferromagnetic insulator interactions.
  • Exchange coupling is crucial for spintronic devices.

Purpose of the Study:

  • To experimentally verify de Gennes' prediction of antiferromagnetic exchange coupling.
  • To explore the potential of this coupling for novel memory applications.

Main Methods:

  • Fabrication of devices with two ferromagnetic Gadolinium Nitride (GdN) layers and a superconducting Vanadium (V) thin film.
  • Utilizing dissimilar switching fields in GdN layers.
  • Measuring resistance states under varying magnetic fields.

Main Results:

  • Demonstrated evidence of antiferromagnetic exchange coupling between GdN layers mediated by the V superconductor.
  • Observed switching between zero and finite resistance states in Vanadium.
  • Achieved non-volatile memory states (zero or finite resistance) at zero magnetic field, dependent on magnetic history.
  • Demonstrated the absolute switching effect.

Conclusions:

  • The study confirms de Gennes' predictions and showcases a novel mechanism for controlling magnetic states via superconductivity.
  • The developed devices exhibit non-volatile memory characteristics, suitable for cryogenic applications.
  • These findings open avenues for superconducting spintronics and quantum circuit components.