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Energy Bands in Solids

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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Band Theory

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Related Experiment Video

Updated: Jan 11, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

Origin of B-Type Blinking at 2D/3D Heterojunction Interfaces.

Tao Zhou¹, Dongyang Wan¹, Yuwei Zhang¹

¹School of Physics, Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.

Advanced Materials (Deerfield Beach, Fla.)

|November 19, 2025

Summary

Researchers identified B-type photoluminescence blinking in 2D materials like WS2/Si. This finding reveals new insights into photocarrier dynamics and optoelectronic device development.

Keywords:

2D materials 2D/3D heterointerface A exciton blinking localized exciton

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Last Updated: Jan 11, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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Published on: October 12, 2019

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Optoelectronics

Background:

Photoluminescence blinking is well-studied in 0D quantum dots and 1D nanowires, with known mechanisms enhancing emitter performance.
The origin of photoluminescence blinking in 2D materials remains less understood, with only A-type blinking previously reported.
Understanding blinking in 2D materials is crucial for optimizing their optoelectronic applications.

Purpose of the Study:

To identify and characterize the type of photoluminescence blinking occurring at WS2/Si heterointerfaces.
To elucidate the underlying mechanisms responsible for the observed blinking phenomenon in 2D materials.
To explore the role of hot carrier dynamics and energy transfer in modulating blinking behavior.

Main Methods:

Identification of B-type photoluminescence blinking using fluorescence lifetime-intensity distribution statistics.
Temperature-dependent photoluminescence and transient absorption spectroscopy to analyze carrier relaxation pathways.
Investigation of Förster resonance energy transfer (FRET) effects on localized exciton density.

Main Results:

B-type photoluminescence blinking was definitively identified at the WS2/Si heterointerface.
The blinking originates from a dynamic competition between two hot carrier relaxation pathways.
Förster resonance energy transfer was found to modulate exciton density and sustain the blinking.

Conclusions:

This study reports the first observation of B-type photoluminescence blinking in 2D materials.
The findings reveal novel photocarrier dynamics distinct from previously studied systems.
This work advances the understanding of 2D/3D heterostructures, benefiting optoelectronic device design.