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An Analytic Compact Model for P-Type Quasi-Ballistic/Ballistic Nanowire GAA MOSFETs Incorporating DIBL Effect
He Cheng1,2, Zhijia Yang1, Chao Zhang1
1State Key Laboratory of Robotics and Intelligent Systems, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China.
None:
We present an analytic compact model for p-type cylindrical gate-all-around (GAA) MOSFETs in the quasi-ballistic/ballistic regime, incorporating drain-induced barrier lowering (DIBL). To describe the potential profile, an undetermined parameter is used to represent the channel potential, which is derived from the Laplace equation in the subthreshold region and from Gauss's law combined with quantum statistics in the inversion region. A smoothing function is applied to this parameter to ensure a continuous source-drain current across all operating regions. The current model is based on the Landauer approach and captures both quasi-ballistic/ballistic transport and quantum-confinement effects. It is validated against non-equilibrium Green's function (NEGF) simulation results and implemented in Verilog-A for SPICE circuit-level simulation of a CMOS inverter, demonstrating its applicability for nanoscale design.
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