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Updated: Aug 25, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
He Cheng1,2,3, Zhijia Yang1,2,3, Chao Zhang1,2,3
1Key Laboratory of Networked Control Systems, Chinese Academy of Sciences, Shenyang 110016, China.
Abstract:
We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL and source-to-drain tunneling effects were both taken into account. This paper introduces an approach to establishing the smoothing function for expressing the critical parameters in the model's overall operating regions. The resulting compact model was tested in a TCAD NEGF simulation, demonstrating good consistency.
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