Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs

This study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °C, switching failure occurs due to severe reverse-recovery degradation. The main cause is the temperature-induced increase in carrier lifetime, leading to a higher reverse-recovery charge, current, and time. A practical solution is proposed by adding a small parallel capacitor, which effectively suppresses reverse recovery and improves switching reliability. This work provides physical insight and a simple strategy for optimizing superjunction MOSFET performance in high-temperature power electronics.