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Updated: Jan 10, 2026

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
Published on: August 17, 2017
An Overview on Formation of Radiation-Induced Interface Traps in Silicon-Based Devices
Xuehui Dai1, Min Zhu1, Fei Wu1
1Naval University of Engineering, Wuhan 430033, China.
Abstract:
In an ionizing radiation environment, the formation of interface traps affects transistor performance, which may lead to device failure. This article reviews interface trap formation mechanisms in silicon-based devices. It explores interface trap types, electrical properties, and their impacts on devices' performance. Finally, the main factors affecting the formation of interface traps are summarized. By reviewing these issues and exploring future research directions, guidance will be provided for the design of radiation-resistant devices to enhance their reliability in irradiated environments.
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