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Area of Science:

  • Electronics
  • Image Sensors
  • Semiconductor Devices

Background:

  • High-speed imaging demands advanced sensor technology.
  • Existing sensors face limitations in frame rate and shutter accuracy.
  • Continuous motion capture requires rapid and precise data acquisition.

Purpose of the Study:

  • To develop an ultra-high-speed monolithic global shutter CMOS image sensor.
  • To achieve continuous motion capture at 326,000 frames per second (fps).
  • To enhance performance through novel pixel and circuit techniques.

Main Methods:

  • Utilized a highly sensitive Back-Side Illuminated (BSI) pixel with a fully depleted substrate.
  • Implemented in-pixel voltage mode storage for pipelined readout.
  • Employed in-pixel analog Correlated Double Sampling (CDS) for low noise.
  • Achieved a 6.4 ns equivalent row time using parallel ADCs and dual readout.
  • Ensured global shutter accuracy with independent row drivers and a 59 ns minimum exposure time.
  • Enhanced dynamic range via on-chip Fixed Pattern Noise (FPN) reduction and PTC-based data compression.

Main Results:

  • Demonstrated continuous motion capture at 326,000 fps with 640 × 480 resolution.
  • Achieved a sensor throughput of 100 Gigapixels/sec.
  • Transferred data off-chip using 128 CML channels at 6.6 Gbps each.
  • Fabricated using a 130 nm monolithic CMOS Image Sensor (CIS) process with BSI postprocessing.

Conclusions:

  • The developed sensor enables unprecedented ultra-high-speed continuous motion capture.
  • The novel design overcomes previous limitations in frame rate and shutter performance.
  • The sensor is suitable for demanding applications requiring high-speed imaging and is in series production.