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Updated: Jan 8, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
High-Efficiency Silicon Heterojunction Solar Cells Enabled by a Mg3(PO4)2/MgF2 Stack with Over 23% Power Conversion
Hongyu Dun1,2,3,4, Zhiyuan Xu1,2,3,4, Yu Yan1,2,3,4
1Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China.
Abstract:
Dopant-free silicon heterojunction (SHJ) solar cells offer several advantages over conventional designs, including lower equipment costs, simplified processing, and reduced parasitic absorption. These benefits have made dopant-free SHJ architectures an area of growing research interest. In this study, magnesium phosphate (Mg3(PO4)2) is introduced as an electron-selective transport layer (ESTL) for SHJ solar cells. The Mg3(PO4)2 film exhibits a work function (WF) of 3.64 eV and achieves a contact resistivity (ρc) of 67.00 mΩ cm2 in an n-Si/a-Si:H(i)/Mg3(PO4)2/Al structure, highlighting its potential for effective electron extraction. Performance evaluations reveal that a Mg3(PO4)2/MgF2 stack outperforms individual layers. A full-rear-contact SHJ solar cell incorporating this stack achieves a power conversion efficiency (PCE) of 22.88%. Furthermore, when Mg3(PO4)2 is applied to the light-incident side with MgF2 as the primary anti-reflection coating, the device reaches a PCE of 23.25%. These results demonstrate the effectiveness of Mg3(PO4)2 as an electron-selective material and establish its promise as a ternary compound ESTL for high-efficiency silicon solar cells.
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