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Heterojunction Solar Cells With Buried Al Grids and Li3PO4 Electron Selective Contacts Approaching 24% Efficiency.

Zhiyuan Xu1,2,3,4, Wei Li1,2,3,4, Yu Yan1,2,3,4

  • 1Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|January 19, 2026
PubMed
Summary

Dopant-free wide-bandgap materials offer a promising alternative for silicon heterojunction (SHJ) solar cell contacts. This study presents an innovative interfacial design achieving record 23.81% efficiency for SHJ solar cells with front contacts.

Keywords:
dopant free front contactelectron selective contactself‐diffusion effectsilicon heterojunction solar cells

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Area of Science:

  • Materials Science
  • Renewable Energy
  • Semiconductor Physics

Background:

  • Dopant-free wide-bandgap materials are attractive alternatives to amorphous silicon (a-Si) contacts in silicon heterojunction (SHJ) solar cells due to their carrier selectivity and compatibility with low-temperature processing.
  • Implementing these contacts on the front side of SHJ solar cells presents challenges in balancing optical losses, contact resistivity, and grid patterns.

Purpose of the Study:

  • To overcome the challenges of implementing dopant-free wide-bandgap contacts on the front side of SHJ solar cells.
  • To develop an interfacial design that optimizes optical properties, reduces electrical resistance, and enhances passivation.
  • To achieve high power conversion efficiency in SHJ solar cells using novel front contact strategies.

Main Methods:

  • An interfacial design integrating a lithium phosphate (Li3PO4) electron-selective layer, a magnesium fluoride (MgF2) anti-reflection coating, and a buried Al/Li3PO4 contact grid was developed.
  • Annealing processes were employed to control aluminum diffusion and enhance the properties of the Li3PO4 and MgF2 layers.
  • The recovery of hydrogen passivation in intrinsic a-Si:H was utilized to suppress interfacial defect states.

Main Results:

  • The interfacial design successfully balanced optical losses and contact resistivity, overcoming previous limitations.
  • Annealing led to confined Al diffusion, downward band bending at the c-Si interface due to MgF2, reduced contact resistivity via phosphorus self-diffusion in Li3PO4, and suppressed interfacial defects.
  • The developed SHJ solar cells achieved a power conversion efficiency of 23.81% (Voc = 715.2 mV, Jsc = 40.65 mA/cm2, FF = 81.9%).

Conclusions:

  • The study demonstrates a viable route for utilizing wide-bandgap compounds as front contacts in SHJ solar cells, achieving the highest reported efficiency for this configuration.
  • The innovative interfacial engineering approach provides a pathway towards next-generation, high-efficiency silicon solar technologies.
  • This work highlights the significant potential of dopant-free materials in advancing photovoltaic performance.