Robust Ga₂O₃ Memristor with Sharp Stable Negative Differential Resistance for Energy-Efficient Reliable Analog...

Nowadays, memristors mainly rely on external circuits to manage power consumption, especially under high electric fields, which increases system complexity and reduces energy efficiency. To solve this problem, it is desirable to achieve memristors with an intrinsic current-limiting mechanism that can energy-efficiently work under high electric fields. Here, we demonstrate a robust Sn-doped β-Ga₂O₃ memristor that exhibits a prominent negative differential resistance (NDR) effect at the MV m^-1 level, which enables effective self-limiting of overshoot current. The coexistence of the NDR and resistive switching characteristics is attributed to the reversible migration of oxygen vacancies and dynamic modulation of the Schottky barrier. Importantly, the memristor demonstrates record-breaking NDR performance metrics, including the sharpest slope up to 3.55 and the longest endurance up to 10³ cycles and 10⁴ seconds, among the reported ones. Furthermore, the memristor exhibits typical analog resistive switching and essential artificial synapse behaviors. Assisted with the sharpest and stablest NDR effect under high electric field, the robust Ga₂O₃ memristor offers a promising platform toward high-performance energy-efficient multifunctional applications.