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The plasmonic BTO-on-SiN platform - beyond 200 GBd modulation for optical communications.

Manuel Kohli1, Daniel Chelladurai2, Laurenz Kulmer2

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Area of Science:

  • Integrated photonics
  • Materials science
  • Optical communications

Background:

  • High-speed modulators are crucial for AI and Tbit/s optical fiber communication.
  • Existing platforms often struggle to balance low loss with high-speed modulation capabilities.

Purpose of the Study:

  • To introduce and demonstrate a novel plasmonic BTO-on-SiN platform for high-speed electro-optic modulators.
  • To leverage the combined advantages of silicon nitride (SiN) photonics and barium titanate (BTO) for enhanced modulator performance.

Main Methods:

  • Integration of low-loss silicon nitride (SiN) with highly nonlinear barium titanate (BTO) on a single platform.
  • Utilizing nanoscale plasmonics to enable miniaturized, high-speed modulator designs.
  • Fabrication and testing of Mach-Zehnder (MZ), IQ, and racetrack (RT) modulators.

Main Results:

  • Demonstrated electro-optical bandwidths up to 110 GHz with active lengths as short as 5 µm.
  • Achieved record data rates of 448 Gbit/s with an IQ modulator and 340 Gbit/s with an MZ modulator.
  • Introduced the first BTO IQ modulator on SiN and the first plasmonic RT modulator with BTO, operating efficiently in the O-band with 2 dB loss.

Conclusions:

  • The plasmonic BTO-on-SiN platform offers a promising solution for next-generation high-speed optical modulators.
  • This technology addresses the increasing demand for faster data transmission in optical communication and AI applications.
  • The versatility of the SiN platform combined with BTO's nonlinear properties paves the way for future advancements in integrated photonics.