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ASE-FFT-based DBR reflection spectrum reconstruction and internal reflection analysis in monolithically integrated

Tae-Hyun Park, Oh-Kee Kwon, Chul-Wook Lee

    Optics Express
    |December 19, 2025
    PubMed
    Summary

    This study introduces a non-destructive amplified spontaneous emission-based fast Fourier transform (ASE-FFT) method to map internal reflections in tunable electro-modulated lasers (TEMLs). The technique accurately characterizes distributed Bragg reflector (DBR) reflectivity and spectral shifts without external equipment.

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    Area of Science:

    • Photonics
    • Integrated Optics
    • Semiconductor Lasers

    Background:

    • Monolithically integrated tunable electro-modulated lasers (TEMLs) require precise characterization of internal optical properties.
    • Non-destructive analysis methods are crucial for optimizing performance and yield in photonic integrated circuits (PICs).

    Purpose of the Study:

    • To develop and validate a non-destructive, on-chip method for analyzing internal reflection characteristics in TEMLs.
    • To quantify distributed Bragg reflector (DBR) reflectivity, spectral shifts, and interface reflections within TEMLs.

    Main Methods:

    • Application of amplified spontaneous emission (ASE)-based fast Fourier transform (ASE-FFT) to below-threshold spectra.
    • Selective inverse FFT of the DBR section to reconstruct its intrinsic Bragg spectrum.
    • Harmonic amplitude ratio analysis for cavity loss estimation.

    Main Results:

    • Achieved 21% DBR reflectivity at 1542.2 nm and a ~3.2 nm redshift of the Bragg wavelength with 50 mA DBR current.
    • Quantified ~11 dB reflection reduction from an antireflection coating and residual active-passive interface reflections.
    • Observed absorption-induced spectral narrowing and baseline rise in distance-domain response due to electro-absorption modulator bias.

    Conclusions:

    • The ASE-FFT method provides a low-complexity, real-time, and spatially resolved tool for characterizing reflections in TEMLs.
    • This technique is applicable for spectral characterization and reflection mapping of various photonic integrated circuits.
    • The method eliminates the need for external light sources or interferometers, simplifying on-chip analysis.