Feature-Selective Preprocessing with Electrically Robust Boron Nitride-Based Dynamic Memristors for Reliable

Wonbae Ahn1, Seungsun Yoo2, Kang Hyun Lee2

  • 1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.

ACS Nano
|December 22, 2025
PubMed
Summary

This study introduces a novel memristor for reservoir computing (RC), enhancing artificial intelligence (AI) efficiency. The device demonstrates remarkable endurance and improves AI accuracy by simplifying data processing for edge computing applications.