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Area of Science:

  • Condensed matter physics
  • Quantum Hall effect
  • Materials science

Background:

  • The quantum Hall effect (QHE) is crucial for understanding band topologies and electron correlations.
  • Controlling even- and odd-integer quantized plateaus in QHSs is challenging.
  • Existing methods often rely on irreversible thickness control.

Purpose of the Study:

  • To demonstrate field-effect-tunable even-odd transitions of QHSs.
  • To investigate the role of electrostatic gating in modulating QHS parity.
  • To explore applications in spintronics and fractional statistics.

Main Methods:

  • Utilizing a fixed two-unit-cell-thick (2-uc-thick) Bi2O2Se film.
  • Applying electrostatic gating to tune quantum oscillations and spin splitting.
  • Performing theoretical calculations to understand Landau level splitting.

Main Results:

  • Achieved reversible even-odd transition of QHSs in the 2-uc-thick Bi2O2Se film.
  • Observed only even-integer QHSs under positive gate voltage (degenerated spin splitting).
  • Observed both even- and odd-integer QHSs under negative gate voltage (significant spin splitting).

Conclusions:

  • Gate-controlled inversion symmetry breaking modulates Landau level splitting, enabling QHS parity switching.
  • Electrostatic gating offers dynamic control over electron correlations and QHS parity in Rashba-type Bi2O2Se.
  • This tunability advances potential applications in fractional statistics and spintronics.