Related Experiment Video
Updated: May 3, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Pressure-Directed Mixed Ionic-Electronic to Pure Electronic Conduction Transition and Improved Dielectric Properties
Susu Duan1,2, Qinglin Wang1, Guozhao Zhang1
1School of Physics Science & Information Technology, Key Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, Liaocheng University, Liaocheng 252000, China.
Abstract:
As a typical dielectric ceramic material, BaTiO3 has attracted considerable interest owing to its high dielectric constant. Using a combination of high-pressure AC impedance spectroscopy, Raman spectroscopy, and theoretical calculations, this study investigated the structural and electrical properties of nanocrystalline BaTiO3 at pressures of up to 30 GPa. The material underwent two phase transitions: from a mixed orthorhombic/tetragonal phase to a pure tetragonal phase and finally to a cubic phase. The superior dielectric constant of the tetragonal phase, compared to that of the other two phases, results from the rapid polarization switching of its 180° domains. The phase transition from the tetragonal phase to the cubic phase leads to a transformation from mixed ionic-electronic conduction to pure electronic conduction, as the high migration energy barrier in the cubic phase hinders ionic conduction. This work demonstrates that applying pressure is a feasible strategy to enhance the dielectric performance of BaTiO3-type dielectrics.
More Related Videos
08:00Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
06:34Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites
Published on: September 19, 2020
Related Concept Videos
Types of Semiconductors
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
The Electrical Double Layer